Global (United States, European Union and China) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Research Report 2019-2025
IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
In 2019, the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of 12.3% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor.
This report studies the global market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.
In global market, the following companies are covered:
Fairchild Semiconductor International Inc
STMicroelectronics
ABB Ltd
Hitachi Power Semiconductor Device Ltd
Toshiba Corporation
Mitsubishi Electric Corporation
Infineon Technologies AG
...
Market Segment by Product Type
Discrete IGBT
IGBT Module
Energy & Power
Market Segment by Application
Consumer Electronics
Inverter & UPS
Electric Vehicle
Industrial System
Others (Medical Devices & Traction)
Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)
The study objectives are:
To analyze and research the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
In this study, the years considered to estimate the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025
IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
In 2019, the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of 12.3% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor.
This report studies the global market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.
In global market, the following companies are covered:
Fairchild Semiconductor International Inc
STMicroelectronics
ABB Ltd
Hitachi Power Semiconductor Device Ltd
Toshiba Corporation
Mitsubishi Electric Corporation
Infineon Technologies AG
...
Market Segment by Product Type
Discrete IGBT
IGBT Module
Energy & Power
Market Segment by Application
Consumer Electronics
Inverter & UPS
Electric Vehicle
Industrial System
Others (Medical Devices & Traction)
Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)
The study objectives are:
To analyze and research the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
In this study, the years considered to estimate the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025
Frequently Asked Questions
This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
- By product type
- By End User/Applications
- By Technology
- By Region
The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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