Global Gate-All-Around FET (GAAFET) Technology Market Professional Survey Report 2019
Gate-All-Around FET (GAAFET) is a multi-gate device that interpolates more than one gate devices into a single device. GAAFET is silicone nanowire with gate going around it. It is a device, where the gate is placed on all four sides of the channel. These multiple gates are controlled by a single gate electrode.
The major factor that drives the demand of GAAFET technology market is the enhancement of breakdown voltage. Minimized energy losses is also the key driver of the market.
In addition GAAFET also has high efficiency, improved durability, and it supports high input impudence, which in turn fuels the market growth. High fabrication cost majorly restricts the market growth.
However, performance issues such as current leakage and breakdown hamper the market.
The global Gate-All-Around FET (GAAFET) Technology market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on Gate-All-Around FET (GAAFET) Technology volume and value at global level, regional level and company level. From a global perspective, this report represents overall Gate-All-Around FET (GAAFET) Technology market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Gate-All-Around FET (GAAFET) Technology in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Gate-All-Around FET (GAAFET) Technology manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.
The following manufacturers are covered:
Infineon Technologies AG
Fairchild Semiconductor.
Renesas Electronics Corporation
Digi-Key Electronics
Toshiba Corporation
IXYS Corporation
Power Integration
STMicroelectronics
NXP semiconductors
ABB Group
Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India
Segment by Type
Type I
Type II
Segment by Application
Energy & Power
Consumer Electronics
Inverter & UPS
Industrial System
Others (Medical Devices & Traction)
The major factor that drives the demand of GAAFET technology market is the enhancement of breakdown voltage. Minimized energy losses is also the key driver of the market.
In addition GAAFET also has high efficiency, improved durability, and it supports high input impudence, which in turn fuels the market growth. High fabrication cost majorly restricts the market growth.
However, performance issues such as current leakage and breakdown hamper the market.
The global Gate-All-Around FET (GAAFET) Technology market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on Gate-All-Around FET (GAAFET) Technology volume and value at global level, regional level and company level. From a global perspective, this report represents overall Gate-All-Around FET (GAAFET) Technology market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Gate-All-Around FET (GAAFET) Technology in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Gate-All-Around FET (GAAFET) Technology manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.
The following manufacturers are covered:
Infineon Technologies AG
Fairchild Semiconductor.
Renesas Electronics Corporation
Digi-Key Electronics
Toshiba Corporation
IXYS Corporation
Power Integration
STMicroelectronics
NXP semiconductors
ABB Group
Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India
Segment by Type
Type I
Type II
Segment by Application
Energy & Power
Consumer Electronics
Inverter & UPS
Industrial System
Others (Medical Devices & Traction)
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