Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Research Report 2022
Market Analysis and Insights: Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market
The power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.
The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size is projected to reach US$ 8713.7 million by 2028, from US$ 1016.4 million in 2021, at a CAGR of 35.5% during 2022-2028.
The major global manufacturers of gallium nitride and silicon carbide power semiconductors include Infineon, CREE (Wolfspeed), Roma Electronics, STMicroelectronics, ON Semiconductor, etc. Gallium nitride and silicon carbide power semiconductor manufacturers are mainly in Europe, America and Japan. Chinese manufacturers started late. Most domestic companies are in the early stage of research and development. The technology is relatively backward and the industry volume is small. There is a big gap with European, American and Japanese manufacturers.
With industry-standard accuracy in analysis and high data integrity, the report makes a brilliant attempt to unveil key opportunities available in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market to help players in achieving a strong market position. Buyers of the report can access verified and reliable market forecasts, including those for the overall size of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market in terms of revenue.
Overall, the report proves to be an effective tool that players can use to gain a competitive edge over their competitors and ensure lasting success in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market. All of the findings, data, and information provided in the report are validated and revalidated with the help of trustworthy sources. The analysts who have authored the report took a unique and industry-best research and analysis approach for an in-depth study of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market.
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Scope and Market Size
Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is segmented by players, region (country), by Type and by Application. Players, stakeholders, and other participants in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Segment by Application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
By Region
North America
United States
Canada
Europe
Germany
France
UK
Italy
Russia
Nordic Countries
Rest of Europe
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
By Company
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.
The power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.
The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size is projected to reach US$ 8713.7 million by 2028, from US$ 1016.4 million in 2021, at a CAGR of 35.5% during 2022-2028.
The major global manufacturers of gallium nitride and silicon carbide power semiconductors include Infineon, CREE (Wolfspeed), Roma Electronics, STMicroelectronics, ON Semiconductor, etc. Gallium nitride and silicon carbide power semiconductor manufacturers are mainly in Europe, America and Japan. Chinese manufacturers started late. Most domestic companies are in the early stage of research and development. The technology is relatively backward and the industry volume is small. There is a big gap with European, American and Japanese manufacturers.
With industry-standard accuracy in analysis and high data integrity, the report makes a brilliant attempt to unveil key opportunities available in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market to help players in achieving a strong market position. Buyers of the report can access verified and reliable market forecasts, including those for the overall size of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market in terms of revenue.
Overall, the report proves to be an effective tool that players can use to gain a competitive edge over their competitors and ensure lasting success in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market. All of the findings, data, and information provided in the report are validated and revalidated with the help of trustworthy sources. The analysts who have authored the report took a unique and industry-best research and analysis approach for an in-depth study of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market.
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Scope and Market Size
Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is segmented by players, region (country), by Type and by Application. Players, stakeholders, and other participants in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Segment by Application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
By Region
North America
United States
Canada
Europe
Germany
France
UK
Italy
Russia
Nordic Countries
Rest of Europe
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
By Company
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.
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