COVID-19 Impact on Silicon Carbide (SiC) Power Devices Market, Global Research Reports 2020-2021
A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
The UPS & PS application segment accounted for the largest silicon carbide power devices market share during 2017. The utilization of SiC power devices in UPS & PS applications will increase in the coming years and the segment will account for the major share of this market till 2023.
This report provides a complete quantitative data and qualitative analysis on the global market for Silicon Carbide (SiC) Power Devices. Market size is analysed by country, product type, application, and competitors. Expanded coverage includes additional end-user industry breakdowns and in-depth producer profiles.
Prior to COVID-19, the global market for Silicon Carbide (SiC) Power Devices was anticipated to grow from US$ XX million in 2020 to US$ XX million by 2026; it is expected to grow at a CAGR of xx% during 2021–2026, whereas post-COVID-19 scenario, the market for Silicon Carbide (SiC) Power Devices is projected to grow from US$ XX million in 2020 (a change by ~XX% compared to market estimated for 2020 before the outbreak of COVID-19) to US$ XX billion by 2026; it is expected to grow at a CAGR of XX% during 2021–2026.
This report covers market size and forecasts of Silicon Carbide (SiC) Power Devices, including the following market information:
Global Silicon Carbide (SiC) Power Devices Market Size, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Type and by Application, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Region (and Key Countries), 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Company, 2019- 2020 (quarterly data), (US$ Million) & (K Units)
Key market players
Major competitors identified in this market include Infineon Technologies, Cree, Mitsubishi Electric, ON Semiconductor, ROHM Semiconductor, STMicroelectronics, Toshiba, etc.
Based on the Region:
Asia-Pacific (China, Japan, South Korea, India and ASEAN)
North America (US and Canada)
Europe (Germany, France, UK and Italy)
Rest of World (Latin America, Middle East & Africa)
Based on the Type:
Diodes
Modules
Transistors
Other
Based on the Application:
EV/HEVs
PV Inverters
UPS & PS
Other
The UPS & PS application segment accounted for the largest silicon carbide power devices market share during 2017. The utilization of SiC power devices in UPS & PS applications will increase in the coming years and the segment will account for the major share of this market till 2023.
This report provides a complete quantitative data and qualitative analysis on the global market for Silicon Carbide (SiC) Power Devices. Market size is analysed by country, product type, application, and competitors. Expanded coverage includes additional end-user industry breakdowns and in-depth producer profiles.
Prior to COVID-19, the global market for Silicon Carbide (SiC) Power Devices was anticipated to grow from US$ XX million in 2020 to US$ XX million by 2026; it is expected to grow at a CAGR of xx% during 2021–2026, whereas post-COVID-19 scenario, the market for Silicon Carbide (SiC) Power Devices is projected to grow from US$ XX million in 2020 (a change by ~XX% compared to market estimated for 2020 before the outbreak of COVID-19) to US$ XX billion by 2026; it is expected to grow at a CAGR of XX% during 2021–2026.
This report covers market size and forecasts of Silicon Carbide (SiC) Power Devices, including the following market information:
Global Silicon Carbide (SiC) Power Devices Market Size, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Type and by Application, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Region (and Key Countries), 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Silicon Carbide (SiC) Power Devices Market Size by Company, 2019- 2020 (quarterly data), (US$ Million) & (K Units)
Key market players
Major competitors identified in this market include Infineon Technologies, Cree, Mitsubishi Electric, ON Semiconductor, ROHM Semiconductor, STMicroelectronics, Toshiba, etc.
Based on the Region:
Asia-Pacific (China, Japan, South Korea, India and ASEAN)
North America (US and Canada)
Europe (Germany, France, UK and Italy)
Rest of World (Latin America, Middle East & Africa)
Based on the Type:
Diodes
Modules
Transistors
Other
Based on the Application:
EV/HEVs
PV Inverters
UPS & PS
Other
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