The global SiC Power Devices market was valued at million US$ in 2018 and will reach million US$ by the end of 2025, growing at a CAGR of during 2019-2025.
This report focuses on SiC Power Devices volume and value at global level, regional level and company level. From a global perspective, this report represents overall SiC Power Devices market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of SiC Power Devices in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their SiC Power Devices manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
ROHM Semiconductor
Infineon
Mitsubishi Electric Corp
STMicroelectronics N.V.
Toshiba Corp
Fuji Electric Co Ltd
International Rectifier
ON Semiconductor Corp

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
SiC Power Device Module
SiC Power Device Diodes

Segment by Application
Motor Drivers
Power Supplies
Photovoltaics
Others