Gallium nitride (GaN) is a material that can be used in the production ofsemiconductor power devices as well as RF components and light emitting diodes (LEDs).
The growing demand for radio frequency in the semiconductor market, booming consumer electronics market and increasing electric vehicles and photovoltaic inverters are some of the major drivers of the GaN semiconductor device market.
The demand for smartphones, gaming devices, laptops, and TVs is also expected to offer a modest growth potential to the GaN semiconductor device market, in the consumer electronics sector.

The global GaN Semiconductor Device market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on GaN Semiconductor Device volume and value at global level, regional level and company level. From a global perspective, this report represents overall GaN Semiconductor Device market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of GaN Semiconductor Device in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their GaN Semiconductor Device manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Toshiba
Panasonic
Cree
GaN Systems
Infineon Technologies
OSRAM
Efficient Power Conversion
NXP Semiconductors
Texas Instruments
NTT Advanced Technology

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
Power Semiconductors
Opto Semiconductors
RF Semiconductors

Segment by Application
Automotive
Consumer Electronics
Aerospace & Defense
Healthcare
Information & Communication Technology