Global Gallium Nitride Semiconductor Device Market Study 2016-2026, by Segment (Opto-Semiconductor Device, Power Semiconductor Device, … …), by Market (Power Drives, Light Detection and Ranging, … …), by Company (Cree, Infineon, … …)
SKU ID :99ST-14592800 | Published Date: 10-Oct-2019 | No. of pages: 50Description
Summary
The global Gallium Nitride Semiconductor Device market will reach Volume Million USD in 2019 and with a CAGR xx% between 2020-2026.
Opto-Semiconductor Device
Power Semiconductor Device
RF Semiconductor Device
Demand Coverage (Market Size & Forecast, Consumer Distribution):
Power Drives
Light Detection and Ranging
Radio Frequency
Lighting and Laser
Cree
Infineon
Qorvo
Macom
Microsemi
Mitsubishi Electric
Efficient Power Conversion (EPC)
GaN Systems
Nichia
Epistar
Exagan
Visic Technologies.
Integra Technologies.
Transphorm
Navitas Semiconductor
North America
Europe
Asia-Pacific
South America
Middle East & Africa
The global Gallium Nitride Semiconductor Device market will reach Volume Million USD in 2019 and with a CAGR xx% between 2020-2026.
Product Type Coverage (Market Size & Forecast, Major Company of Product Type etc.):
Opto-Semiconductor Device
Power Semiconductor Device
RF Semiconductor Device
Demand Coverage (Market Size & Forecast, Consumer Distribution):
Power Drives
Light Detection and Ranging
Radio Frequency
Lighting and Laser
Company Coverage (Sales data, Main Products & Services etc.):
Cree
Infineon
Qorvo
Macom
Microsemi
Mitsubishi Electric
Efficient Power Conversion (EPC)
GaN Systems
Nichia
Epistar
Exagan
Visic Technologies.
Integra Technologies.
Transphorm
Navitas Semiconductor
Major Region
MarketNorth America
Europe
Asia-Pacific
South America
Middle East & Africa
TOC
Tables & Figures
Companies
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