Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity.

The global Gallium Nitride Power Device market was valued at 410 million US$ in 2018 and will reach 2210 million US$ by the end of 2025, growing at a CAGR of 23.5% during 2019-2025.
This report focuses on Gallium Nitride Power Device volume and value at global level, regional level and company level. From a global perspective, this report represents overall Gallium Nitride Power Device market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Gallium Nitride Power Device in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Gallium Nitride Power Device manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Cree Inc
Efficient Power Conversion (EPC) Corporation
Infineon Technologies
GaN Systems Inc
Macom
Microsemi Corporation
Mitsubishi Electric Corporation
Navitas Semiconductor
Qorvo, Inc
Toshiba

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
Power Device
RF Power Device

Segment by Application
Telecommunications
Automotive
Industrial
Medical
Military, Defense& Aerospace
Others