The global Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer market was valued at million US$ in 2018 and will reach million US$ by the end of 2025, growing at a CAGR of during 2019-2025.
This report focuses on Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer volume and value at global level, regional level and company level. From a global perspective, this report represents overall Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Aixtron
Azzurro Semiconductors
Cree
Epigan
Fujitsu
International Quantum Epitaxy (IQE)?
Koninklijke Philips
Mitsubishi Chemical
Nippon Telegraph & Telephone
RF Micro Devices
Texas Instruments
Toshiba

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
Discrete & IC
Substrate Wafer

Segment by Application
Industrial & Power
Communication Infrastructure