The global Gallium Nitride (GaN) Power Devices market was valued at million US$ in 2018 and will reach million US$ by the end of 2025, growing at a CAGR of during 2019-2025.
This report focuses on Gallium Nitride (GaN) Power Devices volume and value at global level, regional level and company level. From a global perspective, this report represents overall Gallium Nitride (GaN) Power Devices market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Gallium Nitride (GaN) Power Devices in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Gallium Nitride (GaN) Power Devices manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Transphorm Inc
Fujitsu Limited
NXP Semiconductors N.V.
GaN Systems Inc
Texas Instruments
Infineon Technologies AG
Cree Incorporated (Wolfspeed)
OSRAM Opto Semiconductors GmbH
Qorvo, Inc

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules

Segment by Application
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Military
Others