Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

The global Ferro-electric Random Access Memory market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on Ferro-electric Random Access Memory volume and value at global level, regional level and company level. From a global perspective, this report represents overall Ferro-electric Random Access Memory market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Ferro-electric Random Access Memory in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Ferro-electric Random Access Memory manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Ramtron
Fujistu
TI
IBM
Infineon
...

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
Serial Memory
Parallel Memory

Segment by Application
Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices